Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 26A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 18nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1250pF @ 15V |
| Power - Max | 52W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D²PAK |
| Product Change Notification | Product Discontinuation 09/Sept/2008 |
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FDB6030L Полевые ДМОП транзисторы N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производитель:
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