Полярность N
Каналов,шт 1
VDSS,В 100
RDS(ON) 10 В,мОм 270
ID,А 1.3
PD,Вт 1.3
Корпус HEXDIP
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 780mA, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 1.3A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 360pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Выводной |
| Корпус (размер) | 4-DIP (0.300", 7.62mm) |
| Корпус | 4-DIP, Hexdip, HVMDIP |
|
IRFD123 MOSFET HEXFET® Power MOSFET
Производитель:
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