Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRLR3636 | 1998 | 57.53 руб. | |
Параметр |
Значение |
|---|---|
| Input Capacitance (Ciss) @ Vds | 3779pF @ 50V |
| Gate Charge (Qg) @ Vgs | 49nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 6.8 mohm @ 50A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 143W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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