Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| MJE15032 (ON SEMICONDUCTOR) | 8 | 287.64 руб. | |
Параметр |
Значение |
|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Current - Collector (Ic) (Max) | 8A |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Power - Max | 2W |
| Frequency - Transition | 30MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
|
MJE15032 Мощные биполярные транзисторы 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
Производитель:
|
||
 |
 |
 |
 |
 |
 |
