Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF5805TRPBF | 24 |
|
|
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 3.8A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.8A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 511pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | Micro6™(TSOP-6) |
| Корпус | Micro6™(TSOP-6) |
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