Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| IRF7828 | 3200 | 22.58 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 10A, 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 13.6A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 14nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1010pF @ 15V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF7828 MOSFET HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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