Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFR024PBF | 83 | 50.69 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 8.4A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 640pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| DXI40N-A 0.25W 50OHM | 1826 | 70.26 руб. | |
| DXI40N-A 0.5W 50OHM | 12520 | 55.70 руб. | |
|
IRFR024PBF MOSFET HEXFET® Power MOSFET
Производитель:
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