Наименование |
Кол-во
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Цена
|
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|---|---|---|---|
| IRFZ34NS | 71 | 137.28 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 16A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 29A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 3.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
|
IRFZ34NS MOSFET HEXFET Power MOSFETs Discrete N-Channel
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