Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRLL024Z | 48 |
|
|
Параметр |
Значение |
|---|---|
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 11nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
|
IRLL024Z MOSFET HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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