Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BSP89 E6327 | 13168 |
|
|
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | SIPMOS® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 350mA, 10V |
| Drain to Source Voltage (Vdss) | 240V |
| Current - Continuous Drain (Id) @ 25° C | 350mA |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Gate Charge (Qg) @ Vgs | 6.4nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 140pF @ 25V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | PG-SOT223-4 |
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