Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| FDV301N | 12000 | 4.81 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 220mA |
| Vgs(th) (Max) @ Id | 1.06V @ 250µA |
| Gate Charge (Qg) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 9.5pF @ 10V |
| Power - Max | 350mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23 |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 2РМ14КПН4Ш1В1 | 33 | 2 323.20 руб. | |
| BSS138 | 79680 | 1.38 руб. | |
| GRM188R61A226ME15D (MURATA) | 41600 | 1.18 руб. | |
| TIP127 (ST MICROELECTRONICS) | 80 | 79.56 руб. | |
|
FDV301N Мощные полевые МОП транзисторы Digital Fet, N-channel
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