Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| FDV303N | 36000 | 1.82 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 680mA |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 2.3nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 10V |
| Power - Max | 350mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23 |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
|
FDV303N MOSFET Digital FET , N-Channel
Производитель:
|
||
 |
 |
 |
 |
 |
 |
