Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF3305 | 8 | 331.58 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 75A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3650pF @ 25V |
| Power - Max | 330W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
|
IRF3305 MOSFET HEXFET Power MOSFETs Discrete N-Channel
Производитель:
|
||
 |
 |
 |
 |
 |
 |
