Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFBC40ASPBF | 12 | 126.72 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.7A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 6.2A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 42nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1036pF @ 25V |
| Power - Max | 125W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
|
IRFBC40ASPBF MOSFET HEXFET® Power MOSFET
Производитель:
|
||
 |
 |
 |
 |
 |
 |
