Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFD110PBF (VISHAY) | 272 | 77.88 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 180pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Выводной |
| Корпус (размер) | 4-DIP (0.300", 7.62mm) |
| Корпус | 4-DIP, Hexdip, HVMDIP |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BTA24-800CW (ST MICROELECTRONICS) | 400 | 199.58 руб. | |
| LQW18ANR10J00D (MURATA) | 15200 | 18.16 руб. | |
|
IRFD110PBF MOSFET HEXFET® Power MOSFET
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