Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFHM830DTRPBF (INFINEON) | 2 | 70.85 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1797pF @ 25V |
| Power - Max | 2.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-VQFN Exposed Pad |
| Корпус | PQFN (3x3) |
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