Наименование |
Кол-во
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Цена
|
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|---|---|---|---|
| NDS352P (ONS) | 111 | 55.78 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 850mA |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 4nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 125pF @ 10V |
| Power - Max | 460mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | 3-SSOT |
|
NDS352P Полевые ДМОП транзисторы P-channel Logic Level Enhancement Mode Field Effect Transistor
Производитель:
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