Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI2325DS-T1-E3 (VISHAY) | 2142 | 77.28 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 500mA, 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 530mA |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
| Power - Max | 750mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 (TO-236) |
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