Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| SI7850DP-T1-E3 (VISHAY) | 4 | 229.76 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 10.3A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 6.2A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® SO-8 |
| Корпус | PowerPAK® SO-8 |
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