Наименование |
Кол-во
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Цена
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|---|---|---|---|
| SI9936DY | 522 | 84.48 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 525pF @ 15V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
|
SI9936DY N-channel Enhancement Mode Field-effect Transistor
Производитель:
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