Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BSS138W | 47600 | 1.58 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | SIPMOS® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 200mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 280mA |
| Vgs(th) (Max) @ Id | 1.4V @ 26µA |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 43pF @ 25V |
| Power - Max | 500mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOT-323 |
| Корпус | PG-SOT323-3 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BAS16 (YJ) | 96000 | 1.18 руб. | |
| CC0805CRNPO9BN6R8 (YAGEO) | 14400 | 2.36 руб. | |
| FDN302P | 9200 | 3.83 руб. | |
| RC0805FR-0712K4L (YAGEO) | 2320 | 2.36 руб. | |
|
BSS138W MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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