Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| FQD19N10LTM (ONS) | 201 | 107.47 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Lead Dimension Change 23/Jan/2007 |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 7.8A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 15.6A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 18nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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