Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF1010EPBF (INFINEON) | 1 | 64.94 руб. | |
Параметр |
Значение |
|---|---|
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 84A |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 50A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 3210pF @ 25V |
| Power - Max | 200W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
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