Наименование |
Кол-во
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Цена
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|---|---|---|---|
| IRFS11N50APBF (VISHAY) | 10 | 141.95 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 520 mOhm @ 6.6A, 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1423pF @ 25V |
| Power - Max | 170W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | D2PAK |
|
IRFS11N50APBF MOSFET HEXFET® Power MOSFET
Производитель:
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