Наименование |
Кол-во
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Цена
|
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|---|---|---|---|
| IXTP80N10T (IXYS) | 26 | 305.80 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchMV™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3040pF @ 25V |
| Power - Max | 230W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220 |
|
IXTP80N10T MOSFET TrenchMV Power MOSFET
Производитель:
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