Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI4425DDY-T1-GE3 (VISHAY) | 5 | 127.66 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 9.8 mOhm @ 13A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 19.7A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2610pF @ 15V |
| Power - Max | 5.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
 |
 |
 |
 |
 |
 |