Наименование |
Кол-во
|
Цена
|
|
---|---|---|---|
SI4435DDY-T1-GE3 (VISHAY) | 147 | 32.39 руб. | |
Параметр |
Значение |
---|---|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 9.1A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11.4A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1350pF @ 15V |
Power - Max | 5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |