Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| FDG6322C | 4 |
|
|
Параметр |
Значение |
|---|---|
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 220mA, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 220mA, 410mA |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 0.4nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 9.5pF @ 10V |
| Power - Max | 300mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSSOP, SC-88, SOT-363 |
| Корпус | SC-70-6 |
| Product Change Notification | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
|
FDG6322C N/P-канальные транзисторные модули Dual N and P Channel Digital Fet
Производитель:
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