Параметр |
Значение |
---|---|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 6.5A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |