Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF9956 | 2344 | 29.35 руб. | |
Параметр |
Значение |
|---|---|
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF9956 30V Dual N-channel HexFET Power MOSFET inA SO-8 Package
Производитель:
|
||
 |
 |
 |
 |
 |
 |
